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Simulations of temperature field in HFCVD diamond films over large area
A. Y. Wang ; C. Sun ; R. F. Huang ; L. S. Wen
刊名Journal of Materials Science & Technology
2003
卷号19期号:1页码:22-26
关键词HFCVD diamond film temperature field simulation chemical vapor-deposition heat-transfer growth plasma phase gas
ISSN号1005-0302
中文摘要A three-dimensional model was developed to investigate the influence of various hot filaments parameters on substrate temperature fields that significantly affect the nucleation and growth of diamond films over large area by hot-filament chemical vapor deposition (HFCVD). Numerical simulated results indicated that substrate temperature varies as a function of hot filaments number, radius, temperature, emissivity, the distance between filaments, and the distance between substrate and filaments arrangement plane. When these filaments parameters were maintained at the optimal values, the homogeneous substrate temperature region of 76 mm x 76 mm with the temperature fluctuation no more than 5% could be obtained by a 80 mm x 80 mm hot filaments arrangement plane. Furthermore, the homogeneous region could be enlarged to 100 mm x 100 mm under the condition of supplementary hot filaments with appropriate parameters. All of these calculations provided the basis for specially optimizing the hot filaments parameters to deposit uniform diamond film over large area by HFCVD.
原文出处://WOS:000180691100007
公开日期2012-04-14
内容类型期刊论文
源URL[http://ir.imr.ac.cn/handle/321006/36033]  
专题金属研究所_中国科学院金属研究所
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A. Y. Wang,C. Sun,R. F. Huang,et al. Simulations of temperature field in HFCVD diamond films over large area[J]. Journal of Materials Science & Technology,2003,19(1):22-26.
APA A. Y. Wang,C. Sun,R. F. Huang,&L. S. Wen.(2003).Simulations of temperature field in HFCVD diamond films over large area.Journal of Materials Science & Technology,19(1),22-26.
MLA A. Y. Wang,et al."Simulations of temperature field in HFCVD diamond films over large area".Journal of Materials Science & Technology 19.1(2003):22-26.
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