Electroluminescence and photoluminescence from scored Si-rich SiO2 film/p-Si structure

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	Electroluminescence and photoluminescence from scored Si-rich SiO2 film/p-Si structure
	G. Z. Ran ; Y. K. Sun ; Y. Chen ; L. Dai ; X. M. Cui ; B. R. Zhang ; Y. P. Qiao ; Z. C. Ma ; W. H. Zong ; G. G. Qin
刊名	Chinese Physics Letters
	2003
卷号	20 期号:2 页码:298-300
关键词	visible photoluminescence amorphous sio2 porous silicon luminescence light
ISSN号	0256-307X
中文摘要	Electroluminescence (EL) is observed from the Au/Si-rich SiO2 film/p-Si diodes, in which the Si-rich SiO2 films are scored deliberately by a diamond tip. The EL intensity of the scored diode annealed at 800 degreesC is about 6 times of that of the unscored counterpart. The EL spectrum of the unscored diode could be decomposed into two Gaussian luminescence bands with peaks at about 1.83 and 2.23eV, while for the EL spectrum of the scored diode, an additional Gaussian band at about 3.0eV appears, and the 1.83-eV peak increases significantly in intensity. The photoluminescence (PL) spectrum of an unscored Si-rich SiO2 film has only one band peaking at about 1.48eV, whereas the PL spectrum of the scored one has two bands at about 1.48 and 1.97eV. We consider that the high-density defect regions produced by the scoring provide new luminescence centres and become some types of nonradiative centres in the Si oxide layer, which thus result in changes of the EL and PL spectra.
原文出处	://WOS:000181193300038
公开日期	2012-04-14
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/36007]
专题	金属研究所_中国科学院金属研究所
推荐引用方式 GB/T 7714	G. Z. Ran,Y. K. Sun,Y. Chen,et al. Electroluminescence and photoluminescence from scored Si-rich SiO2 film/p-Si structure[J]. Chinese Physics Letters,2003,20(2):298-300.
APA	G. Z. Ran.,Y. K. Sun.,Y. Chen.,L. Dai.,X. M. Cui.,...&G. G. Qin.(2003).Electroluminescence and photoluminescence from scored Si-rich SiO2 film/p-Si structure.Chinese Physics Letters,20(2),298-300.
MLA	G. Z. Ran,et al."Electroluminescence and photoluminescence from scored Si-rich SiO2 film/p-Si structure".Chinese Physics Letters 20.2(2003):298-300.