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Preparation of TiC free Ti3SiC2 with improved oxidation resistance by substitution of Si with Al
Y. C. Zhou ; H. B. Zhang ; M. Y. Liu ; J. Y. Wang ; Y. W. Bao
刊名Materials Research Innovations
2004
卷号8期号:2页码:97-102
关键词Ti3SiC2 elimination of TiC mechanical properties oxidation resistance titanium-silicon carbide behavior air ti3alc2 powders hip
ISSN号1432-8917
中文摘要Ti3SiC2 combines many of the merits of both metals and ceramics and has potential in diverse high temperature applications. However, Tic always exists as an impurity phase, which is deleterious to the high-temperature oxidation resistance of Ti3SiC2. Although many attempts have been made, it is difficult to eliminate Tic from Ti3SiC2 due to the close structural relations between the two compounds. In this paper we describe our innovative work to prepare Tic free Ti3SiC2 by the substitution of a small amount of Si with Al. The substitution of Si with Al resulted in the formation of a Ti3Si1-xAlxC2 solid solution. The mechanical properties of the Al doped Ti3SiC2 are close to those of Ti3SiC2, but the oxidation resistance is significantly improved due to the formation of a protective Al2O3 layer during high-temperature oxidation.
原文出处://WOS:000222938400009
公开日期2012-04-14
内容类型期刊论文
源URL[http://ir.imr.ac.cn/handle/321006/35772]  
专题金属研究所_中国科学院金属研究所
推荐引用方式
GB/T 7714
Y. C. Zhou,H. B. Zhang,M. Y. Liu,et al. Preparation of TiC free Ti3SiC2 with improved oxidation resistance by substitution of Si with Al[J]. Materials Research Innovations,2004,8(2):97-102.
APA Y. C. Zhou,H. B. Zhang,M. Y. Liu,J. Y. Wang,&Y. W. Bao.(2004).Preparation of TiC free Ti3SiC2 with improved oxidation resistance by substitution of Si with Al.Materials Research Innovations,8(2),97-102.
MLA Y. C. Zhou,et al."Preparation of TiC free Ti3SiC2 with improved oxidation resistance by substitution of Si with Al".Materials Research Innovations 8.2(2004):97-102.
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