Substrate temperature calculation for pulsed bias arc ion plating

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	Substrate temperature calculation for pulsed bias arc ion plating
	G. Q. Lin ; X. Bai ; C. Dong ; W. Lishi ; L. H. Wen
刊名	Surface & Coatings Technology
	2005
卷号	194 期号:2-3 页码:325-329
关键词	substrate temperature arc ion plating pulsed bias tin deposition voltage
ISSN号	0257-8972
中文摘要	The main factors influencing substrate temperature such as ion bombardment, heat radiation, and heat conductivity are analyzed for Pulsed-Bias Arc Ion Plating (PBAIP). The wave profile of the pulsed bias voltage, varying from -1000 to 0 V, is basically rectangle. This characteristic periodic energy input has an average energy density being equal to the product of that of the DC Arc Ion Plating (DCAIP) and the duty cycle in PBAIP. A temperature model based on energy conservation for the substrate temperature is thus established, which incorporates input ion power, heat radiation and heat conductivity. Experiments are also conducted to verify the calculation. (c) 2004 Elsevier B.V. All rights reserved.
原文出处	://WOS:000227812300020
公开日期	2012-04-14
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/34923]
专题	金属研究所_中国科学院金属研究所
推荐引用方式 GB/T 7714	G. Q. Lin,X. Bai,C. Dong,et al. Substrate temperature calculation for pulsed bias arc ion plating[J]. Surface & Coatings Technology,2005,194(2-3):325-329.
APA	G. Q. Lin,X. Bai,C. Dong,W. Lishi,&L. H. Wen.(2005).Substrate temperature calculation for pulsed bias arc ion plating.Surface & Coatings Technology,194(2-3),325-329.
MLA	G. Q. Lin,et al."Substrate temperature calculation for pulsed bias arc ion plating".Surface & Coatings Technology 194.2-3(2005):325-329.