Study on high-temperature performances of 1.3-mu m InGaAsP-InP strained multiquantum-well buried-heterostructure lasers

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	Study on high-temperature performances of 1.3-mu m InGaAsP-InP strained multiquantum-well buried-heterostructure lasers
	J. Y. Jin ; J. Shi ; D. C. Tian
刊名	Ieee Photonics Technology Letters
	2005
卷号	17 期号:2 页码:276-278
关键词	cavity length high-temperature performance multiquantum-well (MQW) output power degradation semiconductor lasers stripe width efficiency mode
ISSN号	1041-1135
中文摘要	Stripe-width and cavity length dependencies of high-temperature performances of 1.3-mum InGaAsP-InP well-designed buried-hetrostructure strained multiquantum-well (MQW) lasers were investigated. The threshold currents, as low as 4.5110.5 mA and slope efficiencies as high as 0.48/0.42 mW/mA at 25 degreesC/85 degreesC were obtained in the MQW lasers with 1.5-mum width, 250-mum length, and 0.3/0.85 facet reflectivity. With temperature increasing from 25 degreesC to 85 degreesC, the MQW lasers exhibited lower output power degradation, the minimum value was 1.78 dB at an operation current of 45 mA. The MQW lasers were suitable for application in optical access networks.
原文出处	://WOS:000226481700005
公开日期	2012-04-14
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/34887]
专题	金属研究所_中国科学院金属研究所
推荐引用方式 GB/T 7714	J. Y. Jin,J. Shi,D. C. Tian. Study on high-temperature performances of 1.3-mu m InGaAsP-InP strained multiquantum-well buried-heterostructure lasers[J]. Ieee Photonics Technology Letters,2005,17(2):276-278.
APA	J. Y. Jin,J. Shi,&D. C. Tian.(2005).Study on high-temperature performances of 1.3-mu m InGaAsP-InP strained multiquantum-well buried-heterostructure lasers.Ieee Photonics Technology Letters,17(2),276-278.
MLA	J. Y. Jin,et al."Study on high-temperature performances of 1.3-mu m InGaAsP-InP strained multiquantum-well buried-heterostructure lasers".Ieee Photonics Technology Letters 17.2(2005):276-278.