Polarization fatigue of ferroelectric Pb(Zr0.1Ti0.9)O-3 thin films: Temperature dependence

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	Polarization fatigue of ferroelectric Pb(Zr0.1Ti0.9)O-3 thin films: Temperature dependence
	Y. Wang ; K. F. Wang ; C. Zhu ; J. M. Liu
刊名	Journal of Applied Physics
	2006
卷号	99 期号:4
关键词	srbi2ta2o9 capacitors electrodes behavior memories model layer
ISSN号	0021-8979
中文摘要	The polarization switching fatigue behaviors of tetragonal Pb(Zr0.1Ti0.9)O-3(PZT(0.1)) thin films deposited on Pt-coated silicon wafers by the sol-gel method are investigated by testing the fatigue endurance at different temperatures and by measuring the small-signal dielectric loss associated with the fatigued samples. It is observed that the fatigue endurance can be significantly improved at low temperature, while the low-temperature fatigue becomes more serious with increasing magnitude of the electrical pulses for fatigue testing. The fatigued thin films exhibit much bigger dielectric loss than the fresh films over the whole temperature range, due to the domain pinning by the aggregated defects (oxygen vacancies). In addition, the temperature dependence of the fatigue resistance performance of the thin films can be well described by the exponential law. The long-range diffusion and aggregation of the defects and the consequent domain pinning as one of main origins for switching fatigue in the PZT(0.1) thin films are demonstrated. (c) 2006 American Institute of Physics.
原文出处	://WOS:000235663100045
公开日期	2012-04-14
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/34536]
专题	金属研究所_中国科学院金属研究所
推荐引用方式 GB/T 7714	Y. Wang,K. F. Wang,C. Zhu,et al. Polarization fatigue of ferroelectric Pb(Zr0.1Ti0.9)O-3 thin films: Temperature dependence[J]. Journal of Applied Physics,2006,99(4).
APA	Y. Wang,K. F. Wang,C. Zhu,&J. M. Liu.(2006).Polarization fatigue of ferroelectric Pb(Zr0.1Ti0.9)O-3 thin films: Temperature dependence.Journal of Applied Physics,99(4).
MLA	Y. Wang,et al."Polarization fatigue of ferroelectric Pb(Zr0.1Ti0.9)O-3 thin films: Temperature dependence".Journal of Applied Physics 99.4(2006).