Interfacial properties of high-k dielectric CaZrOx films deposited by pulsed laser deposition

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	Interfacial properties of high-k dielectric CaZrOx films deposited by pulsed laser deposition
	X. Y. Qiu ; H. W. Liu ; F. Fang ; M. J. Ha ; Z. G. Liu ; J. M. Liu
刊名	Applied Physics Letters
	2006
卷号	88 期号:18
关键词	chemical-vapor-deposition thermal-stability zro2 films gate dielectrics thin-films si diffusion si(100)
ISSN号	0003-6951
中文摘要	The interfacial properties of high-k dielectric CaZrOx thin films deposited by pulsed laser deposition in O-2 and N-2 ambient are investigated. The SiOx (x < 2) interfacial layer is observed for the films deposited at 300 degrees C in 20 Pa O-2. Rapid thermal annealing (RTA) of the films at 700 degrees C in N-2 for 10 s allows for oxidization of the interfacial layers into SiO2 and decomposition of the films into nano-ZrO2 crystals embedded in the matrix of amorphous CaO-rich zirconate. However, by the same RTA, the films deposited at 300 degrees C in 20 Pa N-2 remain amorphous with clean Si/CaZrOx interface and exhibit good electrical performances. (c) 2006 American Institute of Physics.
原文出处	://WOS:000237321600067
公开日期	2012-04-14
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/34432]
专题	金属研究所_中国科学院金属研究所
推荐引用方式 GB/T 7714	X. Y. Qiu,H. W. Liu,F. Fang,et al. Interfacial properties of high-k dielectric CaZrOx films deposited by pulsed laser deposition[J]. Applied Physics Letters,2006,88(18).
APA	X. Y. Qiu,H. W. Liu,F. Fang,M. J. Ha,Z. G. Liu,&J. M. Liu.(2006).Interfacial properties of high-k dielectric CaZrOx films deposited by pulsed laser deposition.Applied Physics Letters,88(18).
MLA	X. Y. Qiu,et al."Interfacial properties of high-k dielectric CaZrOx films deposited by pulsed laser deposition".Applied Physics Letters 88.18(2006).