Crystal structure and photoluminescence of Tb3+ doped Y3GaO6

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	Crystal structure and photoluminescence of Tb3+ doped Y3GaO6
	F. S. Liu ; Q. L. Liu ; J. K. Liang ; J. Luo ; L. T. Yang ; G. B. Song ; Y. Zhang ; L. X. Wang ; J. N. Yao ; G. H. Rao
刊名	Journal of Alloys and Compounds
	2006
卷号	425 期号:1-2 页码:278-283
关键词	Y3GaO6 crystal structure Tb3+ doped photoluminescence luminescence properties dependence y3al5o12 phosphor ions ce3+ tb-3 uv
ISSN号	0925-8388
中文摘要	A solid solution with formula (Y1-xTbx)(3)GaO6 (x = 0-0.5) was prepared by solid-state reaction method. Powder X-ray diffraction (XRD) shows that Y3GaO6 is isostructural to Gd3GaO6 (Cmc2(1)), and the lattice parameters are a = 8.8364(1) angstrom, b = 11.0899(1) angstrom and c = 5.3937(1) angstrom. Atomic parameters were derived by Rietveld refinement of the XRD pattern. Photoluminescence (PL) spectra show a strong green emission of 543 nm from the D-5(4) -> F-7(5) transition of Th3+ at room and liquid nitrogen temperature. There is a wide saturation range of the PL intensity for the Th3+ content from x = 0.04-0.20, and a long life time about 1200 mu s for the green 543 nm emission at room temperature. (c) 2006 Elsevier B.V. All rights reserved.
原文出处	://WOS:000242641500049
公开日期	2012-04-13
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/34350]
专题	金属研究所_中国科学院金属研究所
推荐引用方式 GB/T 7714	F. S. Liu,Q. L. Liu,J. K. Liang,et al. Crystal structure and photoluminescence of Tb3+ doped Y3GaO6[J]. Journal of Alloys and Compounds,2006,425(1-2):278-283.
APA	F. S. Liu.,Q. L. Liu.,J. K. Liang.,J. Luo.,L. T. Yang.,...&G. H. Rao.(2006).Crystal structure and photoluminescence of Tb3+ doped Y3GaO6.Journal of Alloys and Compounds,425(1-2),278-283.
MLA	F. S. Liu,et al."Crystal structure and photoluminescence of Tb3+ doped Y3GaO6".Journal of Alloys and Compounds 425.1-2(2006):278-283.