Structure and visible photoluminescence of Sm3+, Dy3+ and Tm3+ doped c-axis oriented AlN films | |
F. S. Liu ; Q. L. Liu ; J. K. Liang ; J. Luo ; J. Su ; Y. Zhang ; B. J. Sun ; G. H. Rao | |
刊名 | Chinese Physics
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2006 | |
卷号 | 15期号:10页码:2445-2449 |
关键词 | photoluminescence III-V semiconductor thin film growth thin-films implanted gan tb ions emission luminescence eu er temperature growth |
ISSN号 | 1009-1963 |
中文摘要 | Visible photoluminescence (PL) has been observed from rare earth (Tm, Sm and Dy)-doped AlN films grown by radio-frequency magnetron reactive sputtering. X-ray diffraction indicates that the films are c-axis- oriented hexagonal wurtzite type structure with an average crystal size of about 80 - 110 nm. Room-temperature PL spectra indicate that the blue emission is due to the transition of D-1(2) to F-3(4) and (1)G(4) to H-3(6) intra 4f electron of Tm3+, the yellow emissions of AlN: Sm are due to (4)G(5/2) to the H-6(J) (J = 5/2, 7/2, 9/2, 11/2) and the reddish emissions of AlN:Dy correspond to the F-4(9/2) to H-6(J) (J = 15/2, 13/2, 11/2 and 9/2) and F-6(11/2) transitions. |
原文出处 | |
公开日期 | 2012-04-13 |
内容类型 | 期刊论文 |
源URL | [http://ir.imr.ac.cn/handle/321006/34349] ![]() |
专题 | 金属研究所_中国科学院金属研究所 |
推荐引用方式 GB/T 7714 | F. S. Liu,Q. L. Liu,J. K. Liang,et al. Structure and visible photoluminescence of Sm3+, Dy3+ and Tm3+ doped c-axis oriented AlN films[J]. Chinese Physics,2006,15(10):2445-2449. |
APA | F. S. Liu.,Q. L. Liu.,J. K. Liang.,J. Luo.,J. Su.,...&G. H. Rao.(2006).Structure and visible photoluminescence of Sm3+, Dy3+ and Tm3+ doped c-axis oriented AlN films.Chinese Physics,15(10),2445-2449. |
MLA | F. S. Liu,et al."Structure and visible photoluminescence of Sm3+, Dy3+ and Tm3+ doped c-axis oriented AlN films".Chinese Physics 15.10(2006):2445-2449. |
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