Structure and visible photoluminescence of Sm3+, Dy3+ and Tm3+ doped c-axis oriented AlN films

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	Structure and visible photoluminescence of Sm3+, Dy3+ and Tm3+ doped c-axis oriented AlN films
	F. S. Liu ; Q. L. Liu ; J. K. Liang ; J. Luo ; J. Su ; Y. Zhang ; B. J. Sun ; G. H. Rao
刊名	Chinese Physics
	2006
卷号	15 期号:10 页码:2445-2449
关键词	photoluminescence III-V semiconductor thin film growth thin-films implanted gan tb ions emission luminescence eu er temperature growth
ISSN号	1009-1963
中文摘要	Visible photoluminescence (PL) has been observed from rare earth (Tm, Sm and Dy)-doped AlN films grown by radio-frequency magnetron reactive sputtering. X-ray diffraction indicates that the films are c-axis- oriented hexagonal wurtzite type structure with an average crystal size of about 80 - 110 nm. Room-temperature PL spectra indicate that the blue emission is due to the transition of D-1(2) to F-3(4) and (1)G(4) to H-3(6) intra 4f electron of Tm3+, the yellow emissions of AlN: Sm are due to (4)G(5/2) to the H-6(J) (J = 5/2, 7/2, 9/2, 11/2) and the reddish emissions of AlN:Dy correspond to the F-4(9/2) to H-6(J) (J = 15/2, 13/2, 11/2 and 9/2) and F-6(11/2) transitions.
原文出处	://WOS:000241002400043
公开日期	2012-04-13
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/34349]
专题	金属研究所_中国科学院金属研究所
推荐引用方式 GB/T 7714	F. S. Liu,Q. L. Liu,J. K. Liang,et al. Structure and visible photoluminescence of Sm3+, Dy3+ and Tm3+ doped c-axis oriented AlN films[J]. Chinese Physics,2006,15(10):2445-2449.
APA	F. S. Liu.,Q. L. Liu.,J. K. Liang.,J. Luo.,J. Su.,...&G. H. Rao.(2006).Structure and visible photoluminescence of Sm3+, Dy3+ and Tm3+ doped c-axis oriented AlN films.Chinese Physics,15(10),2445-2449.
MLA	F. S. Liu,et al."Structure and visible photoluminescence of Sm3+, Dy3+ and Tm3+ doped c-axis oriented AlN films".Chinese Physics 15.10(2006):2445-2449.