Effect of Ar on Polycrystalline Si Films Deposited by ECR-PECVD using SiH4

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	Effect of Ar on Polycrystalline Si Films Deposited by ECR-PECVD using SiH4
	H. Cheng ; A. M. Wu ; N. L. Shi ; L. S. Wen
刊名	Journal of Materials Science & Technology
	2008
卷号	24 期号:5 页码:690-692
关键词	Ar flow rate ECR-PECVD Poly-Si Thin Films chemical-vapor-deposition microcrystalline silicon low-temperatures plasma growth transition hydrogen
ISSN号	1005-0302
中文摘要	In this paper, polycrystalline silicon films were deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD) using SiH4/Ar and SiH4/H-2 gaseous mixture. Effects of argon flow rate on the deposition efficiency and the film property were investigated by comparing with H-2. The results indicated that the deposition rate of using Ar as discharge gas was 1.5-2 times higher than that of using H-2, while the preferred orientations and the grain sizes of the films were analogous. Film crystallinity increased with the increase of Ar flow rate. Optimized flow ratio of SiH4 to Ar was obtained as F(SiH4): F(Ar)=10:70 for the highest deposition rate.
原文出处	://WOS:000260048500002
公开日期	2012-04-13
内容类型	期刊论文
源URL	[http://210.72.142.130/handle/321006/32685]
专题	金属研究所_中国科学院金属研究所
推荐引用方式 GB/T 7714	H. Cheng,A. M. Wu,N. L. Shi,et al. Effect of Ar on Polycrystalline Si Films Deposited by ECR-PECVD using SiH4[J]. Journal of Materials Science & Technology,2008,24(5):690-692.
APA	H. Cheng,A. M. Wu,N. L. Shi,&L. S. Wen.(2008).Effect of Ar on Polycrystalline Si Films Deposited by ECR-PECVD using SiH4.Journal of Materials Science & Technology,24(5),690-692.
MLA	H. Cheng,et al."Effect of Ar on Polycrystalline Si Films Deposited by ECR-PECVD using SiH4".Journal of Materials Science & Technology 24.5(2008):690-692.