Enhancement in ultraviolet optoelectronic performance of photoconductive semiconductor switch based on ZnO nanobelts film

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	Enhancement in ultraviolet optoelectronic performance of photoconductive semiconductor switch based on ZnO nanobelts film
	X. J. Zheng ; B. Yang ; T. Zhang ; C. B. Jiang ; S. X. Mao ; Y. Q. Chen ; B. Yuan
刊名	Applied Physics Letters
	2009
卷号	95 期号:22
关键词	chemisorption II-VI semiconductors nanobelts photoconducting switches semiconductor thin films switching functions wide band gap semiconductors zinc compounds thin-films nanowires
ISSN号	0003-6951
中文摘要	Photoconductive semiconductor switches (PCSSs) based on ZnO nanobelts film and ZnO thin film were fabricated and applied into a test circuit to control the circuit state. The photosensitivity, leakage current from I-V characteristics, and the "on-off" voltage ratio from voltage spectrums of the former are 10(2) times higher, ten times lower, and two times higher than that of the latter, respectively. It indicates that PCSS based on ZnO nanobelts film has larger photoresponse, better "off state," and more effective switching function, and they are regarded as consequences of longer transport path and higher surface to volume ratio according to oxygen chemisorption mechanism.
原文出处	://WOS:000272627600006
公开日期	2012-04-13
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/32617]
专题	金属研究所_中国科学院金属研究所
推荐引用方式 GB/T 7714	X. J. Zheng,B. Yang,T. Zhang,et al. Enhancement in ultraviolet optoelectronic performance of photoconductive semiconductor switch based on ZnO nanobelts film[J]. Applied Physics Letters,2009,95(22).
APA	X. J. Zheng.,B. Yang.,T. Zhang.,C. B. Jiang.,S. X. Mao.,...&B. Yuan.(2009).Enhancement in ultraviolet optoelectronic performance of photoconductive semiconductor switch based on ZnO nanobelts film.Applied Physics Letters,95(22).
MLA	X. J. Zheng,et al."Enhancement in ultraviolet optoelectronic performance of photoconductive semiconductor switch based on ZnO nanobelts film".Applied Physics Letters 95.22(2009).