| Interface Engineering for High-Performance Top-Gated MoS2 Field-Effect Transistors | |
| Zou, Xuming; Wang, Jingli; Chiu, Chung-Hua; Wu, Yun; Xiao, Xiangheng; Jiang, Changzhong; Wu, Wen-Wei; Mai, Liqiang; Chen, Tangsheng; Li, Jinchai | |
| 刊名 | ADVANCED MATERIALS
 |
| 2014 | |
| 卷号 | 26期号:36 |
| 关键词 | MoS2 top-gated transistors interface engineering two-dimensional materials |
| ISSN号 | 0935-9648 |
| DOI | 10.1002/adma.201402008 |
| URL标识 | 查看原文 |
| 收录类别 | SCIE ; ESI高被引论文 |
| 语种 | 英语 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/4115968 |
| 专题 | 武汉大学 |
| 推荐引用方式 GB/T 7714 | Zou, Xuming,Wang, Jingli,Chiu, Chung-Hua,et al. Interface Engineering for High-Performance Top-Gated MoS2 Field-Effect Transistors[J]. ADVANCED MATERIALS,2014,26(36). |
| APA | Zou, Xuming.,Wang, Jingli.,Chiu, Chung-Hua.,Wu, Yun.,Xiao, Xiangheng.,...&Liao, Lei.(2014).Interface Engineering for High-Performance Top-Gated MoS2 Field-Effect Transistors.ADVANCED MATERIALS,26(36). |
| MLA | Zou, Xuming,et al."Interface Engineering for High-Performance Top-Gated MoS2 Field-Effect Transistors".ADVANCED MATERIALS 26.36(2014). |
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