| A New Bipolar Type Transistor Created Based on Interface Effects of Integrated All Perovskite Oxides | |
| Xia Feng-Jin; Wu Hao; Fu Yue-Ju; Xu Bo; Yuan Jie; Zhu Bei-Yi; Qiu Xiang-Gang; Cao Li-Xin; Li Jun-Jie; Jin Ai-Zi | |
| 刊名 | CHINESE PHYSICS LETTERS
 |
| 2012 | |
| 卷号 | 29期号:10 |
| ISSN号 | 0256-307X |
| DOI | 10.1088/0256-307X/29/10/107402 |
| URL标识 | 查看原文 |
| 收录类别 | SCIE |
| 语种 | 英语 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/4110802 |
| 专题 | 武汉大学 |
| 推荐引用方式 GB/T 7714 | Xia Feng-Jin,Wu Hao,Fu Yue-Ju,et al. A New Bipolar Type Transistor Created Based on Interface Effects of Integrated All Perovskite Oxides[J]. CHINESE PHYSICS LETTERS,2012,29(10). |
| APA | Xia Feng-Jin.,Wu Hao.,Fu Yue-Ju.,Xu Bo.,Yuan Jie.,...&Zhao Bai-Ru.(2012).A New Bipolar Type Transistor Created Based on Interface Effects of Integrated All Perovskite Oxides.CHINESE PHYSICS LETTERS,29(10). |
| MLA | Xia Feng-Jin,et al."A New Bipolar Type Transistor Created Based on Interface Effects of Integrated All Perovskite Oxides".CHINESE PHYSICS LETTERS 29.10(2012). |
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