Effects of Substrate Temperature on the Growth of Polycrystalline Si Films Deposited with SiH(4)+Ar

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	Effects of Substrate Temperature on the Growth of Polycrystalline Si Films Deposited with SiH(4)+Ar
	H. Cheng ; A. M. Wu ; J. Q. Xiao ; N. L. Shi ; L. S. Wen
刊名	Journal of Materials Science & Technology
	2009
卷号	25 期号:4 页码:489-491
关键词	Poly-Si films ECR-PECVD Substrate temperature Ar-dilution chemical-vapor-deposition ar-diluted sih4 microcrystalline silicon optical-properties h films plasma pecvd hydrogen silane
ISSN号	1005-0302
中文摘要	Polycrystalline silicon (poly-Si) films were deposited using Ar diluted SiH(4) gaseous mixture by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD). The effects of the substrate temperature on deposition rate, crystallinity, grain size and the configuration of H existing in poly-Si film were investigated. The results show that, comparing with H(2) dilution, Ar dilution could significantly decrease the concentration of H on the growing surface. When the substrate temperature increased, the deposition rate increased and the concentration of H decreased monotonously, but the crystallinity and the grain size of poly-Si films exhibited sophisticated trends. It is proposed that the crystallinity of the films is determined by a competing balance of the self-diffusion activity of Si atoms and the deposition rate. At substrate temperature of 200 degrees C, the deposited film exhibits the maximum poly-Si volume fraction of 79%. Based on these results, higher substrate temperature is suggested to prepare the poly-Si films with advanced stability and compromised crystallinity at high deposition rate.
原文出处	://WOS:000268775200014
公开日期	2012-04-13
内容类型	期刊论文
源URL	[http://210.72.142.130/handle/321006/31846]
专题	金属研究所_中国科学院金属研究所
推荐引用方式 GB/T 7714	H. Cheng,A. M. Wu,J. Q. Xiao,et al. Effects of Substrate Temperature on the Growth of Polycrystalline Si Films Deposited with SiH(4)+Ar[J]. Journal of Materials Science & Technology,2009,25(4):489-491.
APA	H. Cheng,A. M. Wu,J. Q. Xiao,N. L. Shi,&L. S. Wen.(2009).Effects of Substrate Temperature on the Growth of Polycrystalline Si Films Deposited with SiH(4)+Ar.Journal of Materials Science & Technology,25(4),489-491.
MLA	H. Cheng,et al."Effects of Substrate Temperature on the Growth of Polycrystalline Si Films Deposited with SiH(4)+Ar".Journal of Materials Science & Technology 25.4(2009):489-491.