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	Effect of measuring factors on ferroelectric properties of Bi3.15Nd0.85Ti3O12 thin films prepared by sol-gel method for non-volatile memory
	Guo, Dongyun; Wang, Chuanbin; Shen, Qiang; Zhang, Lianmeng; Li, Meiya; Liu, Jun
刊名	APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
	2009
卷号	97期号:4
ISSN号	0947-8396
DOI	10.1007/s00339-009-5349-1
URL标识	查看原文
收录类别	SCIE ; EI
语种	英语
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4108741
专题	武汉大学
推荐引用方式 GB/T 7714	Guo, Dongyun,Wang, Chuanbin,Shen, Qiang,et al. Effect of measuring factors on ferroelectric properties of Bi3.15Nd0.85Ti3O12 thin films prepared by sol-gel method for non-volatile memory[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2009,97(4).
APA	Guo, Dongyun,Wang, Chuanbin,Shen, Qiang,Zhang, Lianmeng,Li, Meiya,&Liu, Jun.(2009).Effect of measuring factors on ferroelectric properties of Bi3.15Nd0.85Ti3O12 thin films prepared by sol-gel method for non-volatile memory.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,97(4).
MLA	Guo, Dongyun,et al."Effect of measuring factors on ferroelectric properties of Bi3.15Nd0.85Ti3O12 thin films prepared by sol-gel method for non-volatile memory".APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 97.4(2009).

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