Photoconductive semiconductor switch based on ZnS nanobelts film | |
X. J. Zheng ; Y. Q. Chen ; T. Zhang ; B. Yang ; C. B. Jiang ; B. Yuan ; Z. Zhu | |
刊名 | Sensors and Actuators B-Chemical
![]() |
2010 | |
卷号 | 147期号:2页码:442-446 |
关键词 | ZnS nanobelts Photoconductive Semiconductor switch UV-light oxide |
ISSN号 | 0925-4005 |
中文摘要 | Photoconductive semiconductor switch (PCSS) based on ZnS nanobelts film was fabricated and applied into a test circuit to control the circuit state under illumination of ultraviolet (UV) lights with four wavelengths of 280, 300, 320 and 340 nm. The current-voltage curves show that PCSS based on ZnS nanobelts film is of low leakage current (similar to 10(-8) A) and high photosensitivity (10(4)), and the response time spectra show that the state conversion between "1" and "0" is obviously corresponding to UV illumination "on" and "off". The PCSS based on ZnS nanobelts film is of fast response (typical rise time 0.07 s and decay time 0.05 s) and high voltage response (12 V). The photoconductive properties are regarded to be consequences of longer transport path and higher surface to volume ratio according to oxygen chemisorption mechanism. The results indicate that the PCSS based on ZnS nanobelts film is a promising candidate for future integration of PCSS. (C) 2010 Elsevier B.V. All rights reserved. |
原文出处 | |
公开日期 | 2012-04-13 |
内容类型 | 期刊论文 |
源URL | [http://210.72.142.130/handle/321006/31767] ![]() |
专题 | 金属研究所_中国科学院金属研究所 |
推荐引用方式 GB/T 7714 | X. J. Zheng,Y. Q. Chen,T. Zhang,et al. Photoconductive semiconductor switch based on ZnS nanobelts film[J]. Sensors and Actuators B-Chemical,2010,147(2):442-446. |
APA | X. J. Zheng.,Y. Q. Chen.,T. Zhang.,B. Yang.,C. B. Jiang.,...&Z. Zhu.(2010).Photoconductive semiconductor switch based on ZnS nanobelts film.Sensors and Actuators B-Chemical,147(2),442-446. |
MLA | X. J. Zheng,et al."Photoconductive semiconductor switch based on ZnS nanobelts film".Sensors and Actuators B-Chemical 147.2(2010):442-446. |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论