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	Deep ultraviolet and near infrared photodiode based on n-ZnO/p-silicon nanowire heterojunction fabricated at low temperature
	Zhou, Hai; Fang, Guojia; Yuan, Longyan; Wang, Chong; Yang, Xiaoxia; Huang, Huihui; Zhou, Conghua; Zhao, Xingzhong
刊名	APPLIED PHYSICS LETTERS
	2009
卷号	94期号:1
关键词	electroless deposition elemental semiconductors energy gap II-VI semiconductors nanowires photodiodes semiconductor quantum wires silicon sputter deposition zinc compounds
ISSN号	0003-6951
DOI	10.1063/1.3064161
URL标识	查看原文
收录类别	SCIE ; EI
语种	英语
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4104897
专题	武汉大学
推荐引用方式 GB/T 7714	Zhou, Hai,Fang, Guojia,Yuan, Longyan,et al. Deep ultraviolet and near infrared photodiode based on n-ZnO/p-silicon nanowire heterojunction fabricated at low temperature[J]. APPLIED PHYSICS LETTERS,2009,94(1).
APA	Zhou, Hai.,Fang, Guojia.,Yuan, Longyan.,Wang, Chong.,Yang, Xiaoxia.,...&Zhao, Xingzhong.(2009).Deep ultraviolet and near infrared photodiode based on n-ZnO/p-silicon nanowire heterojunction fabricated at low temperature.APPLIED PHYSICS LETTERS,94(1).
MLA	Zhou, Hai,et al."Deep ultraviolet and near infrared photodiode based on n-ZnO/p-silicon nanowire heterojunction fabricated at low temperature".APPLIED PHYSICS LETTERS 94.1(2009).

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