| Improvements of the ferroelectric properties of high-valence Tb-doped Bi4Ti3O12 thin film grown by sol-gel method | |
| Li, Meiya | |
| 刊名 | MATERIALS LETTERS
 |
| 2010 | |
| 卷号 | 64期号:3 |
| 关键词 | Sol-gel preparation High-valence Tb-doping Thin films Ferroelectrics Fatigue |
| ISSN号 | 0167-577X |
| DOI | 10.1016/j.matlet.2009.11.017 |
| URL标识 | 查看原文 |
| 收录类别 | SCIE ; EI |
| 语种 | 英语 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/4103542 |
| 专题 | 武汉大学 |
| 推荐引用方式 GB/T 7714 | Li, Meiya. Improvements of the ferroelectric properties of high-valence Tb-doped Bi4Ti3O12 thin film grown by sol-gel method[J]. MATERIALS LETTERS,2010,64(3). |
| APA | Li, Meiya.(2010).Improvements of the ferroelectric properties of high-valence Tb-doped Bi4Ti3O12 thin film grown by sol-gel method.MATERIALS LETTERS,64(3). |
| MLA | Li, Meiya."Improvements of the ferroelectric properties of high-valence Tb-doped Bi4Ti3O12 thin film grown by sol-gel method".MATERIALS LETTERS 64.3(2010). |
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