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	Fabrication and optical properties of InGaN/GaN multiple quantum well light emitting diodes with amorphous BaTiO3 ferroelectric film
	Peng Jing; Wu Chuan-Ju; Sun Tang-You; Zhao Wen-Ning; Wu Xiao-Feng; Liu Wen; Wang Shuang-Bao; Jie Quan-Lin; Xu Zhi-Mou
刊名	CHINESE PHYSICS B
	2012
卷号	21期号:6
关键词	InGaN/GaN multiple quantum well light emitting diodes ferroelectric film BaTiO3 optical properties
ISSN号	1674-1056
DOI	10.1088/1674-1056/21/6/067702
URL标识	查看原文
收录类别	SCIE ; EI
语种	英语
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4099366
专题	武汉大学
推荐引用方式 GB/T 7714	Peng Jing,Wu Chuan-Ju,Sun Tang-You,et al. Fabrication and optical properties of InGaN/GaN multiple quantum well light emitting diodes with amorphous BaTiO3 ferroelectric film[J]. CHINESE PHYSICS B,2012,21(6).
APA	Peng Jing.,Wu Chuan-Ju.,Sun Tang-You.,Zhao Wen-Ning.,Wu Xiao-Feng.,...&Xu Zhi-Mou.(2012).Fabrication and optical properties of InGaN/GaN multiple quantum well light emitting diodes with amorphous BaTiO3 ferroelectric film.CHINESE PHYSICS B,21(6).
MLA	Peng Jing,et al."Fabrication and optical properties of InGaN/GaN multiple quantum well light emitting diodes with amorphous BaTiO3 ferroelectric film".CHINESE PHYSICS B 21.6(2012).

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