Fabrication and optical properties of InGaN/GaN multiple quantum well light emitting diodes with amorphous BaTiO3 ferroelectric film | |
Peng Jing; Wu Chuan-Ju; Sun Tang-You; Zhao Wen-Ning; Wu Xiao-Feng; Liu Wen; Wang Shuang-Bao; Jie Quan-Lin; Xu Zhi-Mou | |
刊名 | CHINESE PHYSICS B
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2012 | |
卷号 | 21期号:6 |
关键词 | InGaN/GaN multiple quantum well light emitting diodes ferroelectric film BaTiO3 optical properties |
ISSN号 | 1674-1056 |
DOI | 10.1088/1674-1056/21/6/067702 |
URL标识 | 查看原文 |
收录类别 | SCIE ; EI |
语种 | 英语 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/4099366 |
专题 | 武汉大学 |
推荐引用方式 GB/T 7714 | Peng Jing,Wu Chuan-Ju,Sun Tang-You,et al. Fabrication and optical properties of InGaN/GaN multiple quantum well light emitting diodes with amorphous BaTiO3 ferroelectric film[J]. CHINESE PHYSICS B,2012,21(6). |
APA | Peng Jing.,Wu Chuan-Ju.,Sun Tang-You.,Zhao Wen-Ning.,Wu Xiao-Feng.,...&Xu Zhi-Mou.(2012).Fabrication and optical properties of InGaN/GaN multiple quantum well light emitting diodes with amorphous BaTiO3 ferroelectric film.CHINESE PHYSICS B,21(6). |
MLA | Peng Jing,et al."Fabrication and optical properties of InGaN/GaN multiple quantum well light emitting diodes with amorphous BaTiO3 ferroelectric film".CHINESE PHYSICS B 21.6(2012). |
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