Structure and photoluminescence properties of the quasi-regular arrangements of porous silicon

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	Structure and photoluminescence properties of the quasi-regular arrangements of porous silicon
	T. Wang ; X. Li ; W. Feng ; W. Li ; C. Tao ; J. Wen
刊名	Optoelectronics and Advanced Materials-Rapid Communications
	2011
卷号	5 期号:5-6 页码:495-498
关键词	Porous silicon Electrochemical anodization Quasi-regular arrangement Photoluminescence p-type silicon macroporous silicon si substrate alumina
ISSN号	1842-6573
中文摘要	The morphology of porous silicon treated by electrochemical process depends sensitively on the anodization parameters, such as the current density and electrolyte concentration. In this work, the self-assembly quasi-regular arrangements porous silicon have been fabricated by controlling of the several important anodization parameters. The structure and luminescence characteristics of the etched porous silicon were studied. We discussed the influence of the current density on the morphology of the porous silicon layer and on the luminescence characteristics, and also investigated the effect of anodization time on the luminescence characteristics. Scanning electron microscopy (SEM) images showed that the pores have almost the same size and depth, grow perpendicular to the surface and parallel to each other. The pore diameter ranging from 500 nm to 1 mu m and pore depth being capable of reaching 20 mu m, fresh porous silicon can emit the red light at room temperature and be excited at 400 nm.
原文出处	://WOS:000292891400005
公开日期	2012-04-13
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/30743]
专题	金属研究所_中国科学院金属研究所
推荐引用方式 GB/T 7714	T. Wang,X. Li,W. Feng,et al. Structure and photoluminescence properties of the quasi-regular arrangements of porous silicon[J]. Optoelectronics and Advanced Materials-Rapid Communications,2011,5(5-6):495-498.
APA	T. Wang,X. Li,W. Feng,W. Li,C. Tao,&J. Wen.(2011).Structure and photoluminescence properties of the quasi-regular arrangements of porous silicon.Optoelectronics and Advanced Materials-Rapid Communications,5(5-6),495-498.
MLA	T. Wang,et al."Structure and photoluminescence properties of the quasi-regular arrangements of porous silicon".Optoelectronics and Advanced Materials-Rapid Communications 5.5-6(2011):495-498.