Highly improved resistive switching performances of the self-doped Pt/HfO2:Cu/Cu devices by atomic layer deposition | |
Liu, Sen; Wang, Wei; Li, QingJiang; Zhao, XiaoLong; Li, Nan; Xu, Hui; Liu, Qi; Liu, Ming | |
刊名 | SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY
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2016 | |
卷号 | 59期号:12 |
关键词 | resistive switching nonvolatile memory ECM Cu dopant |
ISSN号 | 1674-7348 |
DOI | 10.1007/s11433-016-0389-9 |
URL标识 | 查看原文 |
收录类别 | SCIE |
语种 | 英语 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/4087963 |
专题 | 武汉大学 |
推荐引用方式 GB/T 7714 | Liu, Sen,Wang, Wei,Li, QingJiang,et al. Highly improved resistive switching performances of the self-doped Pt/HfO2:Cu/Cu devices by atomic layer deposition[J]. SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY,2016,59(12). |
APA | Liu, Sen.,Wang, Wei.,Li, QingJiang.,Zhao, XiaoLong.,Li, Nan.,...&Liu, Ming.(2016).Highly improved resistive switching performances of the self-doped Pt/HfO2:Cu/Cu devices by atomic layer deposition.SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY,59(12). |
MLA | Liu, Sen,et al."Highly improved resistive switching performances of the self-doped Pt/HfO2:Cu/Cu devices by atomic layer deposition".SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY 59.12(2016). |
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