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	Highly improved resistive switching performances of the self-doped Pt/HfO2:Cu/Cu devices by atomic layer deposition
	Liu, Sen; Wang, Wei; Li, QingJiang; Zhao, XiaoLong; Li, Nan; Xu, Hui; Liu, Qi; Liu, Ming
刊名	SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY
	2016
卷号	59期号:12
关键词	resistive switching nonvolatile memory ECM Cu dopant
ISSN号	1674-7348
DOI	10.1007/s11433-016-0389-9
URL标识	查看原文
收录类别	SCIE
语种	英语
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4087963
专题	武汉大学
推荐引用方式 GB/T 7714	Liu, Sen,Wang, Wei,Li, QingJiang,et al. Highly improved resistive switching performances of the self-doped Pt/HfO2:Cu/Cu devices by atomic layer deposition[J]. SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY,2016,59(12).
APA	Liu, Sen.,Wang, Wei.,Li, QingJiang.,Zhao, XiaoLong.,Li, Nan.,...&Liu, Ming.(2016).Highly improved resistive switching performances of the self-doped Pt/HfO2:Cu/Cu devices by atomic layer deposition.SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY,59(12).
MLA	Liu, Sen,et al."Highly improved resistive switching performances of the self-doped Pt/HfO2:Cu/Cu devices by atomic layer deposition".SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY 59.12(2016).

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