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	Positron annihilation studied defects and their influence on thermal conductivity of chemically synthesized Bi2Te3nanocrystal
	He, Hui-Fang; Chen, Zhi-Quan
刊名	物理学报
	2015
卷号	64期号:20
ISSN号	1000-3290
DOI	10.7498/aps.64.207804
URL标识	查看原文
收录类别	EI
语种	中文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4053766
专题	武汉大学
推荐引用方式 GB/T 7714	He, Hui-Fang,Chen, Zhi-Quan. Positron annihilation studied defects and their influence on thermal conductivity of chemically synthesized Bi2Te3nanocrystal[J]. 物理学报,2015,64(20).
APA	He, Hui-Fang,&Chen, Zhi-Quan.(2015).Positron annihilation studied defects and their influence on thermal conductivity of chemically synthesized Bi2Te3nanocrystal.物理学报,64(20).
MLA	He, Hui-Fang,et al."Positron annihilation studied defects and their influence on thermal conductivity of chemically synthesized Bi2Te3nanocrystal".物理学报 64.20(2015).

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