Positive Shift in Threshold Voltage Induced by CuO and NiOx Gate in AlGaN/GaN HEMTs | |
Li, Yi; Guo, Yaxiong; Zhang, Kai; Zou, Xuming; Wang, Jingli; Kong, Yuechan; Chen, Tangsheng; Jiang, Changzhong; Fang, Guojia; Liu, Chuansheng | |
刊名 | IEEE TRANSACTIONS ON ELECTRON DEVICES
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2017 | |
卷号 | 64期号:8 |
关键词 | AlGaN/GaN CuO gate NiOx gate p-type metal oxide threshold voltage |
ISSN号 | 0018-9383 |
DOI | 10.1109/TED.2017.2712782 |
URL标识 | 查看原文 |
收录类别 | SCIE ; EI |
语种 | 英语 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/4048372 |
专题 | 武汉大学 |
推荐引用方式 GB/T 7714 | Li, Yi,Guo, Yaxiong,Zhang, Kai,et al. Positive Shift in Threshold Voltage Induced by CuO and NiOx Gate in AlGaN/GaN HEMTs[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2017,64(8). |
APA | Li, Yi.,Guo, Yaxiong.,Zhang, Kai.,Zou, Xuming.,Wang, Jingli.,...&Liao, Lei.(2017).Positive Shift in Threshold Voltage Induced by CuO and NiOx Gate in AlGaN/GaN HEMTs.IEEE TRANSACTIONS ON ELECTRON DEVICES,64(8). |
MLA | Li, Yi,et al."Positive Shift in Threshold Voltage Induced by CuO and NiOx Gate in AlGaN/GaN HEMTs".IEEE TRANSACTIONS ON ELECTRON DEVICES 64.8(2017). |
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