Manipulating the Microcavity Structure for Highly Efficient Inverted Top-Emitting Organic Light-Emitting Diodes: Simulation and Experiment
Wang QA ; Deng ZQ ; Chen JS ; Ma DG
刊名ieee transactions on electron devices
2010
卷号57期号:9页码:2221-2226
关键词DEVICES EMISSION DISPLAYS LAYERS
ISSN号0018-9383
通讯作者wang qa
中文摘要a comprehensive theoretical and experimental study on inverted top-emitting organic light-emitting diodes (itoleds) with a microcavity structure is demonstrated. in the itoleds, tris-(8-hydroxyquinoline) aluminum (alq(3)) is used as the emitting material and the outcoupling capping layer, and the 2, 9-dimethyl-4, 7-diphenyl-1, 10-phenanthroline is used as the hole/exciton-blocking layer to confine most emitting dipoles exactly at the desired resonant position. a classical optical model is adopted to simulate the electroluminescence intensity and the spectral characteristics as a function of a viewing angle. the factors that influence optical interference effects and light outcoupling are discussed systematically. the optimized itoled shows an enhanced outcoupling efficiency and highly saturated colors compared with that of the corresponding conventional bottom-emitting light-emitting diode while the angular dependence of the emission wavelength is minimized.
收录类别SCI收录期刊论文
语种英语
WOS记录号WOS:000283138200023
公开日期2012-04-25
内容类型期刊论文
源URL[http://ir.ciac.jl.cn/handle/322003/43338]  
专题长春应用化学研究所_长春应用化学研究所知识产出_期刊论文
推荐引用方式
GB/T 7714
Wang QA,Deng ZQ,Chen JS,et al. Manipulating the Microcavity Structure for Highly Efficient Inverted Top-Emitting Organic Light-Emitting Diodes: Simulation and Experiment[J]. ieee transactions on electron devices,2010,57(9):2221-2226.
APA Wang QA,Deng ZQ,Chen JS,&Ma DG.(2010).Manipulating the Microcavity Structure for Highly Efficient Inverted Top-Emitting Organic Light-Emitting Diodes: Simulation and Experiment.ieee transactions on electron devices,57(9),2221-2226.
MLA Wang QA,et al."Manipulating the Microcavity Structure for Highly Efficient Inverted Top-Emitting Organic Light-Emitting Diodes: Simulation and Experiment".ieee transactions on electron devices 57.9(2010):2221-2226.
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