Sb-rich Si-Sb-Te phase change material for multilevel data storage: The degree of disorder in the crystalline state

	Sb-rich Si-Sb-Te phase change material for multilevel data storage: The degree of disorder in the crystalline state
	Zhou,XL ; Wu,LC ; Song,ZT ; Rao,F ; Cheng,Y ; Peng,C ; Yao,DN ; Song,SN ; Liu,B ; Feng,SL ; Chen,BM
刊名	APPLIED PHYSICS LETTERS
	2011
卷号	99 期号:3 页码:32105
关键词	AMER INST PHYSICS
ISSN号	0003-6951
学科主题	Physics ; Applied
公开日期	2012-04-10
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/106743]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Zhou,XL,Wu,LC,Song,ZT,et al. Sb-rich Si-Sb-Te phase change material for multilevel data storage: The degree of disorder in the crystalline state[J]. APPLIED PHYSICS LETTERS,2011,99(3):32105.
APA	Zhou,XL.,Wu,LC.,Song,ZT.,Rao,F.,Cheng,Y.,...&Chen,BM.(2011).Sb-rich Si-Sb-Te phase change material for multilevel data storage: The degree of disorder in the crystalline state.APPLIED PHYSICS LETTERS,99(3),32105.
MLA	Zhou,XL,et al."Sb-rich Si-Sb-Te phase change material for multilevel data storage: The degree of disorder in the crystalline state".APPLIED PHYSICS LETTERS 99.3(2011):32105.