Sb-rich Si-Sb-Te phase change material for multilevel data storage: The degree of disorder in the crystalline state | |
Zhou,XL ; Wu,LC ; Song,ZT ; Rao,F ; Cheng,Y ; Peng,C ; Yao,DN ; Song,SN ; Liu,B ; Feng,SL ; Chen,BM | |
刊名 | APPLIED PHYSICS LETTERS
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2011 | |
卷号 | 99期号:3页码:32105 |
关键词 | AMER INST PHYSICS |
ISSN号 | 0003-6951 |
学科主题 | Physics ; Applied |
公开日期 | 2012-04-10 |
内容类型 | 期刊论文 |
源URL | [http://ir.sim.ac.cn/handle/331004/106743] ![]() |
专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
推荐引用方式 GB/T 7714 | Zhou,XL,Wu,LC,Song,ZT,et al. Sb-rich Si-Sb-Te phase change material for multilevel data storage: The degree of disorder in the crystalline state[J]. APPLIED PHYSICS LETTERS,2011,99(3):32105. |
APA | Zhou,XL.,Wu,LC.,Song,ZT.,Rao,F.,Cheng,Y.,...&Chen,BM.(2011).Sb-rich Si-Sb-Te phase change material for multilevel data storage: The degree of disorder in the crystalline state.APPLIED PHYSICS LETTERS,99(3),32105. |
MLA | Zhou,XL,et al."Sb-rich Si-Sb-Te phase change material for multilevel data storage: The degree of disorder in the crystalline state".APPLIED PHYSICS LETTERS 99.3(2011):32105. |
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