Study on changes in the structure of HfSiO and HfSiON dielectrics with different annealing temperature by photoelectron spectroscopy

	Study on changes in the structure of HfSiO and HfSiON dielectrics with different annealing temperature by photoelectron spectroscopy
	Yang, XM ; Yu, T ; Wu, XM ; Zhuge, LJ ; Ge, SB ; He, JJ
刊名	APPLIED SURFACE SCIENCE
	2011
卷号	257 期号:22 页码:9277-9281
关键词	ELSEVIER SCIENCE BV
ISSN号	0169-4332
学科主题	Chemistry, Physical; Materials Science, Coatings & Films; Physics, Applied; Physics, Condensed Matter
语种	英语
公开日期	2012-04-10
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/106742]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Yang, XM,Yu, T,Wu, XM,et al. Study on changes in the structure of HfSiO and HfSiON dielectrics with different annealing temperature by photoelectron spectroscopy[J]. APPLIED SURFACE SCIENCE,2011,257(22):9277-9281.
APA	Yang, XM,Yu, T,Wu, XM,Zhuge, LJ,Ge, SB,&He, JJ.(2011).Study on changes in the structure of HfSiO and HfSiON dielectrics with different annealing temperature by photoelectron spectroscopy.APPLIED SURFACE SCIENCE,257(22),9277-9281.
MLA	Yang, XM,et al."Study on changes in the structure of HfSiO and HfSiON dielectrics with different annealing temperature by photoelectron spectroscopy".APPLIED SURFACE SCIENCE 257.22(2011):9277-9281.