Study on changes in the structure of HfSiO and HfSiON dielectrics with different annealing temperature by photoelectron spectroscopy | |
Yang, XM ; Yu, T ; Wu, XM ; Zhuge, LJ ; Ge, SB ; He, JJ | |
刊名 | APPLIED SURFACE SCIENCE
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2011 | |
卷号 | 257期号:22页码:9277-9281 |
关键词 | ELSEVIER SCIENCE BV |
ISSN号 | 0169-4332 |
学科主题 | Chemistry, Physical; Materials Science, Coatings & Films; Physics, Applied; Physics, Condensed Matter |
语种 | 英语 |
公开日期 | 2012-04-10 |
内容类型 | 期刊论文 |
源URL | [http://ir.sim.ac.cn/handle/331004/106742] ![]() |
专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
推荐引用方式 GB/T 7714 | Yang, XM,Yu, T,Wu, XM,et al. Study on changes in the structure of HfSiO and HfSiON dielectrics with different annealing temperature by photoelectron spectroscopy[J]. APPLIED SURFACE SCIENCE,2011,257(22):9277-9281. |
APA | Yang, XM,Yu, T,Wu, XM,Zhuge, LJ,Ge, SB,&He, JJ.(2011).Study on changes in the structure of HfSiO and HfSiON dielectrics with different annealing temperature by photoelectron spectroscopy.APPLIED SURFACE SCIENCE,257(22),9277-9281. |
MLA | Yang, XM,et al."Study on changes in the structure of HfSiO and HfSiON dielectrics with different annealing temperature by photoelectron spectroscopy".APPLIED SURFACE SCIENCE 257.22(2011):9277-9281. |
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