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	Stress evolution in AlN and GaN grown on Si(111): experiments and theoretical modeling
	Dai, Yiquan; Li, Shuiming; Gao, Hongwei; Wang, Weihui; Sun, Qian; Peng, Qing; Gui, Chengqun; Qian, Zhengfang; Liu, Sheng
刊名	JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
	2016
卷号	27期号:2
ISSN号	0957-4522
DOI	10.1007/s10854-015-3984-1
URL标识	查看原文
收录类别	SCIE
语种	英语
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3891950
专题	武汉大学
推荐引用方式 GB/T 7714	Dai, Yiquan,Li, Shuiming,Gao, Hongwei,et al. Stress evolution in AlN and GaN grown on Si(111): experiments and theoretical modeling[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2016,27(2).
APA	Dai, Yiquan.,Li, Shuiming.,Gao, Hongwei.,Wang, Weihui.,Sun, Qian.,...&Liu, Sheng.(2016).Stress evolution in AlN and GaN grown on Si(111): experiments and theoretical modeling.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,27(2).
MLA	Dai, Yiquan,et al."Stress evolution in AlN and GaN grown on Si(111): experiments and theoretical modeling".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 27.2(2016).

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