Fundamental relationship of excitonic photoluminescence intensity with excitation density in semiconductor quantum well structures

	Fundamental relationship of excitonic photoluminescence intensity with excitation density in semiconductor quantum well structures
	Jin, SR ; Ramsteiner, M ; Grahn, HT ; Ploog, KH ; Li, ZH ; Shen, DX ; Zhu, ZQ
刊名	JOURNAL OF APPLIED PHYSICS
	2000
卷号	88 期号:7 页码:4075-4078
关键词	TEMPERATURE-DEPENDENCE RECOMBINATION LIFETIMES INGAAS/GAAS DYNAMICS CARRIERS KINETICS
ISSN号	0021-8979
通讯作者	Jin, SR, Univ Surrey, Dept Phys, Guildford GU2 5XH, Surrey, England
学科主题	Physics, Applied
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/95852]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Jin, SR,Ramsteiner, M,Grahn, HT,et al. Fundamental relationship of excitonic photoluminescence intensity with excitation density in semiconductor quantum well structures[J]. JOURNAL OF APPLIED PHYSICS,2000,88(7):4075-4078.
APA	Jin, SR.,Ramsteiner, M.,Grahn, HT.,Ploog, KH.,Li, ZH.,...&Zhu, ZQ.(2000).Fundamental relationship of excitonic photoluminescence intensity with excitation density in semiconductor quantum well structures.JOURNAL OF APPLIED PHYSICS,88(7),4075-4078.
MLA	Jin, SR,et al."Fundamental relationship of excitonic photoluminescence intensity with excitation density in semiconductor quantum well structures".JOURNAL OF APPLIED PHYSICS 88.7(2000):4075-4078.