Nonlinear free-carrier absorption of intense THz radiation in semiconductors

	Nonlinear free-carrier absorption of intense THz radiation in semiconductors
	Lei, XL ; Liu, SY
刊名	JOURNAL OF PHYSICS-CONDENSED MATTER
	2000
卷号	12 期号:21 页码:4655-4664
关键词	3-DIMENSIONAL ELECTRON GASES TRANSPORT RESONANCE FIELD
ISSN号	0953-8984
通讯作者	Lei, XL, Shanghai Siaotong Univ, Dept Appl Phys, Shanghai 200050, Peoples R China
学科主题	Physics, Condensed Matter
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/95769]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Lei, XL,Liu, SY. Nonlinear free-carrier absorption of intense THz radiation in semiconductors[J]. JOURNAL OF PHYSICS-CONDENSED MATTER,2000,12(21):4655-4664.
APA	Lei, XL,&Liu, SY.(2000).Nonlinear free-carrier absorption of intense THz radiation in semiconductors.JOURNAL OF PHYSICS-CONDENSED MATTER,12(21),4655-4664.
MLA	Lei, XL,et al."Nonlinear free-carrier absorption of intense THz radiation in semiconductors".JOURNAL OF PHYSICS-CONDENSED MATTER 12.21(2000):4655-4664.