Nonlinear free-carrier absorption of intense THz radiation in semiconductors | |
Lei, XL ; Liu, SY | |
刊名 | JOURNAL OF PHYSICS-CONDENSED MATTER
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2000 | |
卷号 | 12期号:21页码:4655-4664 |
关键词 | 3-DIMENSIONAL ELECTRON GASES TRANSPORT RESONANCE FIELD |
ISSN号 | 0953-8984 |
通讯作者 | Lei, XL, Shanghai Siaotong Univ, Dept Appl Phys, Shanghai 200050, Peoples R China |
学科主题 | Physics, Condensed Matter |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2012-03-24 |
内容类型 | 期刊论文 |
源URL | [http://ir.sim.ac.cn/handle/331004/95769] ![]() |
专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
推荐引用方式 GB/T 7714 | Lei, XL,Liu, SY. Nonlinear free-carrier absorption of intense THz radiation in semiconductors[J]. JOURNAL OF PHYSICS-CONDENSED MATTER,2000,12(21):4655-4664. |
APA | Lei, XL,&Liu, SY.(2000).Nonlinear free-carrier absorption of intense THz radiation in semiconductors.JOURNAL OF PHYSICS-CONDENSED MATTER,12(21),4655-4664. |
MLA | Lei, XL,et al."Nonlinear free-carrier absorption of intense THz radiation in semiconductors".JOURNAL OF PHYSICS-CONDENSED MATTER 12.21(2000):4655-4664. |
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