Characteristics of strain compensated 1.3 mu m InAsP/InGaAsP ridge waveguide laser diodes grown by gas source MBE

	Characteristics of strain compensated 1.3 mu m InAsP/InGaAsP ridge waveguide laser diodes grown by gas source MBE
	Zhang, YG(张永刚） ; Chen, JX ; Chen, YQ ; Qi, M ; Li, AZ ; Frojdh, K ; Stoltz, B
刊名	JOURNAL OF CRYSTAL GROWTH
	2001
卷号	227 页码:329-333
关键词	QUANTUM-WELL LASERS MOLECULAR-BEAM-EPITAXY HIGH-TEMPERATURE OPERATION CHEMICAL-VAPOR-DEPOSITION THRESHOLD CURRENT-DENSITY WAVELENGTH LASERS 1.3-MU-M LASERS MQW LASERS DEPENDENCE EFFICIENCY
ISSN号	0022-0248
通讯作者	Zhang, YG, Chinese Acad Sci, Shanghai Inst Met, State Key Lab Funct Mat Informat, 865 Chang Ning Rd, Shanghai 200050, Peoples R China
学科主题	Crystallography; Materials Science, Multidisciplinary; Physics, Applied
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/95676]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Zhang, YG,Chen, JX,Chen, YQ,et al. Characteristics of strain compensated 1.3 mu m InAsP/InGaAsP ridge waveguide laser diodes grown by gas source MBE[J]. JOURNAL OF CRYSTAL GROWTH,2001,227:329-333.
APA	Zhang, YG.,Chen, JX.,Chen, YQ.,Qi, M.,Li, AZ.,...&Stoltz, B.(2001).Characteristics of strain compensated 1.3 mu m InAsP/InGaAsP ridge waveguide laser diodes grown by gas source MBE.JOURNAL OF CRYSTAL GROWTH,227,329-333.
MLA	Zhang, YG,et al."Characteristics of strain compensated 1.3 mu m InAsP/InGaAsP ridge waveguide laser diodes grown by gas source MBE".JOURNAL OF CRYSTAL GROWTH 227(2001):329-333.