Characteristics of strain compensated 1.3 mu m InAsP/InGaAsP ridge waveguide laser diodes grown by gas source MBE | |
Zhang, YG(张永刚) ; Chen, JX ; Chen, YQ ; Qi, M ; Li, AZ ; Frojdh, K ; Stoltz, B | |
刊名 | JOURNAL OF CRYSTAL GROWTH
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2001 | |
卷号 | 227页码:329-333 |
关键词 | QUANTUM-WELL LASERS MOLECULAR-BEAM-EPITAXY HIGH-TEMPERATURE OPERATION CHEMICAL-VAPOR-DEPOSITION THRESHOLD CURRENT-DENSITY WAVELENGTH LASERS 1.3-MU-M LASERS MQW LASERS DEPENDENCE EFFICIENCY |
ISSN号 | 0022-0248 |
通讯作者 | Zhang, YG, Chinese Acad Sci, Shanghai Inst Met, State Key Lab Funct Mat Informat, 865 Chang Ning Rd, Shanghai 200050, Peoples R China |
学科主题 | Crystallography; Materials Science, Multidisciplinary; Physics, Applied |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2012-03-24 |
内容类型 | 期刊论文 |
源URL | [http://ir.sim.ac.cn/handle/331004/95676] ![]() |
专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
推荐引用方式 GB/T 7714 | Zhang, YG,Chen, JX,Chen, YQ,et al. Characteristics of strain compensated 1.3 mu m InAsP/InGaAsP ridge waveguide laser diodes grown by gas source MBE[J]. JOURNAL OF CRYSTAL GROWTH,2001,227:329-333. |
APA | Zhang, YG.,Chen, JX.,Chen, YQ.,Qi, M.,Li, AZ.,...&Stoltz, B.(2001).Characteristics of strain compensated 1.3 mu m InAsP/InGaAsP ridge waveguide laser diodes grown by gas source MBE.JOURNAL OF CRYSTAL GROWTH,227,329-333. |
MLA | Zhang, YG,et al."Characteristics of strain compensated 1.3 mu m InAsP/InGaAsP ridge waveguide laser diodes grown by gas source MBE".JOURNAL OF CRYSTAL GROWTH 227(2001):329-333. |
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