Comparison of fabrication techniques of SIMON materials with buried multi-layers

	Comparison of fabrication techniques of SIMON materials with buried multi-layers
	Yi,Wanbing ; Chen,Meng ; Zhang,Enxia ; Liu,Xianghua ; Chen,Jing ; Dong,Yemin ; Jin,Bo ; Liu,Zhongli ; Wang,Xi
刊名	Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
	2004
卷号	25 期号:7 页码:814-818
中文摘要	SIMON SOI materials are successfully fabricated by sequential implantation and annealing of oxygen and nitrogen ions with quite a few combinatorial dose-energy-sequence conditions. The results indicate that superior SIMON SOI wafers with highly sharp inte
收录类别	SCI
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/95442]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Yi,Wanbing,Chen,Meng,Zhang,Enxia,et al. Comparison of fabrication techniques of SIMON materials with buried multi-layers[J]. Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors,2004,25(7):814-818.
APA	Yi,Wanbing.,Chen,Meng.,Zhang,Enxia.,Liu,Xianghua.,Chen,Jing.,...&Wang,Xi.(2004).Comparison of fabrication techniques of SIMON materials with buried multi-layers.Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors,25(7),814-818.
MLA	Yi,Wanbing,et al."Comparison of fabrication techniques of SIMON materials with buried multi-layers".Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors 25.7(2004):814-818.