Structure and electrical properties of Ge2Sb2Te5 thin film used for Ovonic unified memory

	Structure and electrical properties of Ge2Sb2Te5 thin film used for Ovonic unified memory
	Zhang, T ; Liu, B ; Xia, JL ; Song, ZT ; Feng, SL ; Chen, B
刊名	CHINESE PHYSICS LETTERS
	2004
卷号	21 期号:4 页码:741-743
关键词	REVERSIBLE PHASE-TRANSITION TELLURIDE GLASSES CRYSTALLIZATION SEMICONDUCTORS GE20TE80-XBIX
ISSN号	0256-307X
通讯作者	Zhang, T, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Res Ctr Funct Semicond Film Engn & Technol, Shanghai 200050, Peoples R China
学科主题	Physics, Multidisciplinary
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/95416]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Zhang, T,Liu, B,Xia, JL,et al. Structure and electrical properties of Ge2Sb2Te5 thin film used for Ovonic unified memory[J]. CHINESE PHYSICS LETTERS,2004,21(4):741-743.
APA	Zhang, T,Liu, B,Xia, JL,Song, ZT,Feng, SL,&Chen, B.(2004).Structure and electrical properties of Ge2Sb2Te5 thin film used for Ovonic unified memory.CHINESE PHYSICS LETTERS,21(4),741-743.
MLA	Zhang, T,et al."Structure and electrical properties of Ge2Sb2Te5 thin film used for Ovonic unified memory".CHINESE PHYSICS LETTERS 21.4(2004):741-743.