Optimized implant dose and energy to fabricate high-quality patterned SIMOX SOI materials

	Optimized implant dose and energy to fabricate high-quality patterned SIMOX SOI materials
	Dong, YM ; Chen, J ; Wang, X ; Chen, M ; Wang, X
刊名	SOLID STATE COMMUNICATIONS
	2004
卷号	130 期号:3-4 页码:275-279
关键词	SILICON-ON-INSULATOR OXYGEN-ION-IMPLANTATION SEPARATION EVOLUTION DESIGN
ISSN号	0038-1098
通讯作者	Dong, YM, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Ion Beam Lab, 865 Changning Rd, Shanghai 200050, Peoples R China
学科主题	Physics, Condensed Matter
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/95413]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Dong, YM,Chen, J,Wang, X,et al. Optimized implant dose and energy to fabricate high-quality patterned SIMOX SOI materials[J]. SOLID STATE COMMUNICATIONS,2004,130(3-4):275-279.
APA	Dong, YM,Chen, J,Wang, X,Chen, M,&Wang, X.(2004).Optimized implant dose and energy to fabricate high-quality patterned SIMOX SOI materials.SOLID STATE COMMUNICATIONS,130(3-4),275-279.
MLA	Dong, YM,et al."Optimized implant dose and energy to fabricate high-quality patterned SIMOX SOI materials".SOLID STATE COMMUNICATIONS 130.3-4(2004):275-279.