Fabrication and mechanism of relaxed SiGe-on-insulator by modified Ge condensation

	Fabrication and mechanism of relaxed SiGe-on-insulator by modified Ge condensation
	Di, ZF ; Zhang, M ; Liu, WL ; Luo, SH ; Song, ZT ; Lin, CL ; Huang, AP ; Chu, PK
刊名	JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
	2005
卷号	23 期号:4 页码:1637-1640
关键词	HOLE MOBILITY ENHANCEMENT STRAINED-SI OXIDATION BEHAVIOR HIGH-PERFORMANCE COMPLIANT OXIDE N-MOSFETS GERMANIUM SUBSTRATE ELECTRON ISLANDS
ISSN号	1071-1023
通讯作者	Chu, PK, City Univ Hong Kong, Dept Phys & Mat Sci, Tat Chee Ave, Kowloon, Hong Kong, Peoples R China
学科主题	Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/95355]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Di, ZF,Zhang, M,Liu, WL,et al. Fabrication and mechanism of relaxed SiGe-on-insulator by modified Ge condensation[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,2005,23(4):1637-1640.
APA	Di, ZF.,Zhang, M.,Liu, WL.,Luo, SH.,Song, ZT.,...&Chu, PK.(2005).Fabrication and mechanism of relaxed SiGe-on-insulator by modified Ge condensation.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,23(4),1637-1640.
MLA	Di, ZF,et al."Fabrication and mechanism of relaxed SiGe-on-insulator by modified Ge condensation".JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 23.4(2005):1637-1640.