Strain relaxation mechanism in SiGe-on-insulator fabricated by Ge condensation

	Strain relaxation mechanism in SiGe-on-insulator fabricated by Ge condensation
	Di, ZF ; Huang, AP ; Chu, PK ; Zhang, M ; Liu, WL ; Song, ZT ; Luo, SH ; Lin, CL
刊名	JOURNAL OF CRYSTAL GROWTH
	2005
卷号	281 期号:2-4 页码:275-280
关键词	MOBILITY ENHANCEMENT RAMAN-SCATTERING HIGH-PERFORMANCE COMPLIANT OXIDE N-MOSFETS OXIDATION SUBSTRATE STABILITY ELECTRON ISLANDS
ISSN号	0022-0248
通讯作者	Chu, PK, City Univ Hong Kong, Dept Phys & Mat Sci, Tat Chee Ave, Kowloon, Hong Kong, Peoples R China
学科主题	Crystallography; Materials Science, Multidisciplinary; Physics, Applied
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/95294]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Di, ZF,Huang, AP,Chu, PK,et al. Strain relaxation mechanism in SiGe-on-insulator fabricated by Ge condensation[J]. JOURNAL OF CRYSTAL GROWTH,2005,281(2-4):275-280.
APA	Di, ZF.,Huang, AP.,Chu, PK.,Zhang, M.,Liu, WL.,...&Lin, CL.(2005).Strain relaxation mechanism in SiGe-on-insulator fabricated by Ge condensation.JOURNAL OF CRYSTAL GROWTH,281(2-4),275-280.
MLA	Di, ZF,et al."Strain relaxation mechanism in SiGe-on-insulator fabricated by Ge condensation".JOURNAL OF CRYSTAL GROWTH 281.2-4(2005):275-280.