Effects of the technology of implanting nitrogen into buried oxide layer on the characteristics of partially depleted SOI nMOSFET

	Effects of the technology of implanting nitrogen into buried oxide layer on the characteristics of partially depleted SOI nMOSFET
	Zheng, ZS ; Liu, ZL ; Zhang, GQ ; Li, N ; Fan, K ; Zhang, EX ; Yi, WB ; Chen, M ; Wang, X
刊名	ACTA PHYSICA SINICA
	2005
卷号	54 期号:1 页码:348-353
关键词	SILICON SCATTERING INVERSION MOBILITY DEVICES
ISSN号	1000-3290
通讯作者	Zheng, ZS, Chinese Acad Sci, Inst Semicond, Microelect R&D Ctr, Beijing 100083, Peoples R China
学科主题	Physics ; Multidisciplinary
收录类别	SCI
语种	中文
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/95287]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Zheng, ZS,Liu, ZL,Zhang, GQ,et al. Effects of the technology of implanting nitrogen into buried oxide layer on the characteristics of partially depleted SOI nMOSFET[J]. ACTA PHYSICA SINICA,2005,54(1):348-353.
APA	Zheng, ZS.,Liu, ZL.,Zhang, GQ.,Li, N.,Fan, K.,...&Wang, X.(2005).Effects of the technology of implanting nitrogen into buried oxide layer on the characteristics of partially depleted SOI nMOSFET.ACTA PHYSICA SINICA,54(1),348-353.
MLA	Zheng, ZS,et al."Effects of the technology of implanting nitrogen into buried oxide layer on the characteristics of partially depleted SOI nMOSFET".ACTA PHYSICA SINICA 54.1(2005):348-353.