Phase transition phenomena in ultra-thin Ge2Sb2Te5 film

	Phase transition phenomena in ultra-thin Ge2Sb2Te5 film
	Zhang, T ; Liu, B ; Song, ZT ; Liu, WL ; Feng, SL ; Chen, B
刊名	CHINESE PHYSICS LETTERS
	2005
卷号	22 期号:7 页码:1803-1805
关键词	OVONIC UNIFIED MEMORY CRYSTALLIZATION
ISSN号	0256-307X
通讯作者	Zhang, T, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Res Ctr Funct Semicond Film Engn Technol, Shanghai 200050, Peoples R China
学科主题	Physics, Multidisciplinary
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/95281]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Zhang, T,Liu, B,Song, ZT,et al. Phase transition phenomena in ultra-thin Ge2Sb2Te5 film[J]. CHINESE PHYSICS LETTERS,2005,22(7):1803-1805.
APA	Zhang, T,Liu, B,Song, ZT,Liu, WL,Feng, SL,&Chen, B.(2005).Phase transition phenomena in ultra-thin Ge2Sb2Te5 film.CHINESE PHYSICS LETTERS,22(7),1803-1805.
MLA	Zhang, T,et al."Phase transition phenomena in ultra-thin Ge2Sb2Te5 film".CHINESE PHYSICS LETTERS 22.7(2005):1803-1805.