Broadband microwave noise characteristics of high-linearity composite-channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN HEMTs

	Broadband microwave noise characteristics of high-linearity composite-channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN HEMTs
	Cheng, ZQ ; Liu, J ; Zhou, YG ; Cai, Y ; Chen, KJ ; Lau, KM
刊名	IEEE ELECTRON DEVICE LETTERS
	2005
卷号	26 期号:8 页码:521-523
关键词	PERFORMANCE GANHEMTS DC RF
ISSN号	0741-3106
通讯作者	Cheng, ZQ, Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China
学科主题	Engineering, Electrical & Electronic
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/95269]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Cheng, ZQ,Liu, J,Zhou, YG,et al. Broadband microwave noise characteristics of high-linearity composite-channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN HEMTs[J]. IEEE ELECTRON DEVICE LETTERS,2005,26(8):521-523.
APA	Cheng, ZQ,Liu, J,Zhou, YG,Cai, Y,Chen, KJ,&Lau, KM.(2005).Broadband microwave noise characteristics of high-linearity composite-channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN HEMTs.IEEE ELECTRON DEVICE LETTERS,26(8),521-523.
MLA	Cheng, ZQ,et al."Broadband microwave noise characteristics of high-linearity composite-channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN HEMTs".IEEE ELECTRON DEVICE LETTERS 26.8(2005):521-523.