Comparison of metal-organic chemical vapour deposition TiN thin films with different process cycles

	Comparison of metal-organic chemical vapour deposition TiN thin films with different process cycles
	Yi, LW ; Zhang, WJ ; Wu, J ; Mao, DL
刊名	SEMICONDUCTOR SCIENCE AND TECHNOLOGY
	2006
卷号	21 期号:3 页码:250-253
关键词	TITANIUM NITRIDE PLASMA TREATMENT
ISSN号	0268-1242
通讯作者	Yi, LW, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China
学科主题	Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Condensed Matter
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/95182]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Yi, LW,Zhang, WJ,Wu, J,et al. Comparison of metal-organic chemical vapour deposition TiN thin films with different process cycles[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2006,21(3):250-253.
APA	Yi, LW,Zhang, WJ,Wu, J,&Mao, DL.(2006).Comparison of metal-organic chemical vapour deposition TiN thin films with different process cycles.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,21(3),250-253.
MLA	Yi, LW,et al."Comparison of metal-organic chemical vapour deposition TiN thin films with different process cycles".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 21.3(2006):250-253.