Damascene array structure of phase change memory fabricated with chemical mechanical polishing method
Liu, QB ; Song, ZT ; Zhang, KL ; Wang, LY ; Feng, SL ; Chen, BM
刊名CHINESE PHYSICS LETTERS
2006
卷号23期号:8页码:2296-2298
关键词ION-BEAM METHOD CELL-ELEMENT
ISSN号0256-307X
通讯作者Liu, QB, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Lab Nanotechnol, Shanghai 200050, Peoples R China
学科主题Physics, Multidisciplinary
收录类别SCI
语种英语
公开日期2012-03-24
内容类型期刊论文
源URL[http://ir.sim.ac.cn/handle/331004/95180]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
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GB/T 7714
Liu, QB,Song, ZT,Zhang, KL,et al. Damascene array structure of phase change memory fabricated with chemical mechanical polishing method[J]. CHINESE PHYSICS LETTERS,2006,23(8):2296-2298.
APA Liu, QB,Song, ZT,Zhang, KL,Wang, LY,Feng, SL,&Chen, BM.(2006).Damascene array structure of phase change memory fabricated with chemical mechanical polishing method.CHINESE PHYSICS LETTERS,23(8),2296-2298.
MLA Liu, QB,et al."Damascene array structure of phase change memory fabricated with chemical mechanical polishing method".CHINESE PHYSICS LETTERS 23.8(2006):2296-2298.
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