Effect of dry etching on light emission of InAsP/InP SMQWs

	Effect of dry etching on light emission of InAsP/InP SMQWs
	Cao, M ; Wu, HZ ; Lu, C ; Lao, YF ; Huang, ZC ; Xie, ZS ; Zhang, J ; Jiang, S
刊名	ACTA PHYSICA SINICA
	2007
卷号	56 期号:2 页码:1027-1031
关键词	QUANTUM-WELLS INP (111)B HETEROSTRUCTURES HYDROGENATION ENHANCEMENT LASER
ISSN号	1000-3290
通讯作者	Wu, HZ, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
学科主题	Physics, Multidisciplinary
收录类别	SCI
语种	中文
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/95079]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Cao, M,Wu, HZ,Lu, C,et al. Effect of dry etching on light emission of InAsP/InP SMQWs[J]. ACTA PHYSICA SINICA,2007,56(2):1027-1031.
APA	Cao, M.,Wu, HZ.,Lu, C.,Lao, YF.,Huang, ZC.,...&Jiang, S.(2007).Effect of dry etching on light emission of InAsP/InP SMQWs.ACTA PHYSICA SINICA,56(2),1027-1031.
MLA	Cao, M,et al."Effect of dry etching on light emission of InAsP/InP SMQWs".ACTA PHYSICA SINICA 56.2(2007):1027-1031.