Effect of dry etching on light emission of InAsP/InP SMQWs | |
Cao, M ; Wu, HZ ; Lu, C ; Lao, YF ; Huang, ZC ; Xie, ZS ; Zhang, J ; Jiang, S | |
刊名 | ACTA PHYSICA SINICA
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2007 | |
卷号 | 56期号:2页码:1027-1031 |
关键词 | QUANTUM-WELLS INP (111)B HETEROSTRUCTURES HYDROGENATION ENHANCEMENT LASER |
ISSN号 | 1000-3290 |
通讯作者 | Wu, HZ, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China |
学科主题 | Physics, Multidisciplinary |
收录类别 | SCI |
语种 | 中文 |
公开日期 | 2012-03-24 |
内容类型 | 期刊论文 |
源URL | [http://ir.sim.ac.cn/handle/331004/95079] ![]() |
专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
推荐引用方式 GB/T 7714 | Cao, M,Wu, HZ,Lu, C,et al. Effect of dry etching on light emission of InAsP/InP SMQWs[J]. ACTA PHYSICA SINICA,2007,56(2):1027-1031. |
APA | Cao, M.,Wu, HZ.,Lu, C.,Lao, YF.,Huang, ZC.,...&Jiang, S.(2007).Effect of dry etching on light emission of InAsP/InP SMQWs.ACTA PHYSICA SINICA,56(2),1027-1031. |
MLA | Cao, M,et al."Effect of dry etching on light emission of InAsP/InP SMQWs".ACTA PHYSICA SINICA 56.2(2007):1027-1031. |
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