Si1Sb2Te3 phase change material for chalcogenide random access memory

	Si1Sb2Te3 phase change material for chalcogenide random access memory
	Zhang, T ; Song, ZT ; Liu, B ; Liu, WL ; Feng, SL ; Chen, B
刊名	CHINESE PHYSICS
	2007
卷号	16 期号:8 页码:2475-2478
关键词	OVONIC UNIFIED MEMORY AMORPHOUS THIN-FILMS OPTICAL DISK RESISTANCE MEASUREMENTS ELECTRICAL-PROPERTIES GE2SB2TE5 FILM TE GLASSES CRYSTALLIZATION IMPLANTATION BEHAVIOR
ISSN号	1009-1963
通讯作者	Zhang, T, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Lab Nanotechnol, Shanghai 200050, Peoples R China
学科主题	Physics, Multidisciplinary
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/95061]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Zhang, T,Song, ZT,Liu, B,et al. Si1Sb2Te3 phase change material for chalcogenide random access memory[J]. CHINESE PHYSICS,2007,16(8):2475-2478.
APA	Zhang, T,Song, ZT,Liu, B,Liu, WL,Feng, SL,&Chen, B.(2007).Si1Sb2Te3 phase change material for chalcogenide random access memory.CHINESE PHYSICS,16(8),2475-2478.
MLA	Zhang, T,et al."Si1Sb2Te3 phase change material for chalcogenide random access memory".CHINESE PHYSICS 16.8(2007):2475-2478.