Effects of Ge doping on the properties of Sb2Te3 phase-change thin films

	Effects of Ge doping on the properties of Sb2Te3 phase-change thin films
	Yu, JL ; Liu, B ; Zhang, T ; Song, ZT ; Feng, SL ; Chen, BM
刊名	APPLIED SURFACE SCIENCE
	2007
卷号	253 期号:14 页码:6125-6129
关键词	TRANSMISSION ELECTRON-MICROSCOPY CHALCOGENIDE GLASSES ANTIMONY TELLURIDE SINGLE-CRYSTALS MEMORY GE2SB2TE5 CRYSTALLIZATION TRANSITION
ISSN号	0169-4332
通讯作者	Yu, JL, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Lab Nanotechnol, Shanghai 200050, Peoples R China
学科主题	Chemistry, Physical; Materials Science, Coatings & Films; Physics, Applied; Physics, Condensed Matter
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/95039]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Yu, JL,Liu, B,Zhang, T,et al. Effects of Ge doping on the properties of Sb2Te3 phase-change thin films[J]. APPLIED SURFACE SCIENCE,2007,253(14):6125-6129.
APA	Yu, JL,Liu, B,Zhang, T,Song, ZT,Feng, SL,&Chen, BM.(2007).Effects of Ge doping on the properties of Sb2Te3 phase-change thin films.APPLIED SURFACE SCIENCE,253(14),6125-6129.
MLA	Yu, JL,et al."Effects of Ge doping on the properties of Sb2Te3 phase-change thin films".APPLIED SURFACE SCIENCE 253.14(2007):6125-6129.