GaAs/AlAs DBR optimized growth by GSMBE and its characterization
Xie, ZS ; Wu, HZ ; Lao, YF ; Liu, C ; Cao, M
刊名RARE METAL MATERIALS AND ENGINEERING
2007
卷号36期号:4页码:587-591
关键词SURFACE-EMITTING LASERS REFRACTIVE-INDEX WAFER FUSION SUPERLATTICES DESIGN GAAS ALAS
ISSN号1002-185X
通讯作者Xie, ZS, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
学科主题Materials Science, Multidisciplinary; Metallurgy & Metallurgical Engineering
收录类别SCI
原文出处http://www.cnki.net/kcms/detail/detail.aspx?Quer20120228ID=1&CurRec=1&DbCode=CJFQ&dbname=CJFD0608&filename=COSE200704005&uid=WEEvREcwSlJHSldRa1FiNlkrcGxDdnIxMmpnbm9qZk9NRDgraGlWZjgwQXNLZUZ6a1V2NUI20120228UjVI201202281JzbDd3PQ==
语种中文
公开日期2012-03-24
内容类型期刊论文
源URL[http://ir.sim.ac.cn/handle/331004/95037]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
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GB/T 7714
Xie, ZS,Wu, HZ,Lao, YF,et al. GaAs/AlAs DBR optimized growth by GSMBE and its characterization[J]. RARE METAL MATERIALS AND ENGINEERING,2007,36(4):587-591.
APA Xie, ZS,Wu, HZ,Lao, YF,Liu, C,&Cao, M.(2007).GaAs/AlAs DBR optimized growth by GSMBE and its characterization.RARE METAL MATERIALS AND ENGINEERING,36(4),587-591.
MLA Xie, ZS,et al."GaAs/AlAs DBR optimized growth by GSMBE and its characterization".RARE METAL MATERIALS AND ENGINEERING 36.4(2007):587-591.
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