Simulation of phase-change random access memory with ring-type contactor for low reset current by finite element modelling

	Simulation of phase-change random access memory with ring-type contactor for low reset current by finite element modelling
	Gong, YF ; Ling, Y ; Song, ZT ; Feng, SL
刊名	CHINESE PHYSICS LETTERS
	2008
卷号	25 期号:9 页码:3455-3458
关键词	CRYSTALLIZATION OPERATION DEVICE
ISSN号	0256-307X
通讯作者	Gong, YF, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
学科主题	Physics, Multidisciplinary
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/95032]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Gong, YF,Ling, Y,Song, ZT,et al. Simulation of phase-change random access memory with ring-type contactor for low reset current by finite element modelling[J]. CHINESE PHYSICS LETTERS,2008,25(9):3455-3458.
APA	Gong, YF,Ling, Y,Song, ZT,&Feng, SL.(2008).Simulation of phase-change random access memory with ring-type contactor for low reset current by finite element modelling.CHINESE PHYSICS LETTERS,25(9),3455-3458.
MLA	Gong, YF,et al."Simulation of phase-change random access memory with ring-type contactor for low reset current by finite element modelling".CHINESE PHYSICS LETTERS 25.9(2008):3455-3458.