Thick GaN grown on a nanoporous GaN template by hydride vapor phase epitaxy

	Thick GaN grown on a nanoporous GaN template by hydride vapor phase epitaxy
	Wang, XZ ; Yu, GH ; Lin, CT ; Cao, MX ; Gong, H ; Qi, M ; Li, AZ
刊名	ELECTROCHEMICAL AND SOLID STATE LETTERS
	2008
卷号	11 期号:10 页码:H273-H275
关键词	HIGH-QUALITY GAN PLANE SAPPHIRE POROUS GAN FILMS NANOHETEROEPITAXY FABRICATION EPILAYERS LAYERS SI
ISSN号	1099-0062
通讯作者	Wang, XZ, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
学科主题	Electrochemistry; Materials Science, Multidisciplinary
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/95015]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Wang, XZ,Yu, GH,Lin, CT,et al. Thick GaN grown on a nanoporous GaN template by hydride vapor phase epitaxy[J]. ELECTROCHEMICAL AND SOLID STATE LETTERS,2008,11(10):H273-H275.
APA	Wang, XZ.,Yu, GH.,Lin, CT.,Cao, MX.,Gong, H.,...&Li, AZ.(2008).Thick GaN grown on a nanoporous GaN template by hydride vapor phase epitaxy.ELECTROCHEMICAL AND SOLID STATE LETTERS,11(10),H273-H275.
MLA	Wang, XZ,et al."Thick GaN grown on a nanoporous GaN template by hydride vapor phase epitaxy".ELECTROCHEMICAL AND SOLID STATE LETTERS 11.10(2008):H273-H275.