Thick GaN grown on a nanoporous GaN template by hydride vapor phase epitaxy | |
Wang, XZ ; Yu, GH ; Lin, CT ; Cao, MX ; Gong, H ; Qi, M ; Li, AZ | |
刊名 | ELECTROCHEMICAL AND SOLID STATE LETTERS
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2008 | |
卷号 | 11期号:10页码:H273-H275 |
关键词 | HIGH-QUALITY GAN PLANE SAPPHIRE POROUS GAN FILMS NANOHETEROEPITAXY FABRICATION EPILAYERS LAYERS SI |
ISSN号 | 1099-0062 |
通讯作者 | Wang, XZ, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China |
学科主题 | Electrochemistry; Materials Science, Multidisciplinary |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2012-03-24 |
内容类型 | 期刊论文 |
源URL | [http://ir.sim.ac.cn/handle/331004/95015] ![]() |
专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
推荐引用方式 GB/T 7714 | Wang, XZ,Yu, GH,Lin, CT,et al. Thick GaN grown on a nanoporous GaN template by hydride vapor phase epitaxy[J]. ELECTROCHEMICAL AND SOLID STATE LETTERS,2008,11(10):H273-H275. |
APA | Wang, XZ.,Yu, GH.,Lin, CT.,Cao, MX.,Gong, H.,...&Li, AZ.(2008).Thick GaN grown on a nanoporous GaN template by hydride vapor phase epitaxy.ELECTROCHEMICAL AND SOLID STATE LETTERS,11(10),H273-H275. |
MLA | Wang, XZ,et al."Thick GaN grown on a nanoporous GaN template by hydride vapor phase epitaxy".ELECTROCHEMICAL AND SOLID STATE LETTERS 11.10(2008):H273-H275. |
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