Characterization of bonded silicon-on-aluminum-nitride wafers with RBS, TEM and HRXRD techniques

	Characterization of bonded silicon-on-aluminum-nitride wafers with RBS, TEM and HRXRD techniques
	Men, CL ; Lin, CL
刊名	MICROELECTRONIC ENGINEERING
	2008
卷号	85 期号:8 页码:1807-1810
关键词	BEAM-ENHANCED DEPOSITION ALN THIN-FILMS
ISSN号	0167-9317
通讯作者	Men, CL, Shanghai Univ Sci & Technol, Coll Power Engn, Shanghai 200093, Peoples R China
学科主题	Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Optics; Physics, Applied
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/95013]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Men, CL,Lin, CL. Characterization of bonded silicon-on-aluminum-nitride wafers with RBS, TEM and HRXRD techniques[J]. MICROELECTRONIC ENGINEERING,2008,85(8):1807-1810.
APA	Men, CL,&Lin, CL.(2008).Characterization of bonded silicon-on-aluminum-nitride wafers with RBS, TEM and HRXRD techniques.MICROELECTRONIC ENGINEERING,85(8),1807-1810.
MLA	Men, CL,et al."Characterization of bonded silicon-on-aluminum-nitride wafers with RBS, TEM and HRXRD techniques".MICROELECTRONIC ENGINEERING 85.8(2008):1807-1810.