Influence of preparing process on total-dose radiation response of high-k Hf-based gate dielectrics

	Influence of preparing process on total-dose radiation response of high-k Hf-based gate dielectrics
	Song, ZR ; Cheng, XH ; Zhang, EX ; Xing, YM ; Yu, YH ; Zhang, ZX ; Wang, X ; Shen, DS
刊名	THIN SOLID FILMS
	2008
卷号	517 期号:1 页码:465-467
关键词	BORON PENETRATION TRANSISTORS CHARGE SI
ISSN号	0040-6090
通讯作者	Cheng, XH, Univ Wenzhou, Xueyuan Rd, Wenzhou 325000, Peoples R China
学科主题	Materials Science, Multidisciplinary; Materials Science, Coatings & Films; Physics, Applied; Physics, Condensed Matter
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/95002]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Song, ZR,Cheng, XH,Zhang, EX,et al. Influence of preparing process on total-dose radiation response of high-k Hf-based gate dielectrics[J]. THIN SOLID FILMS,2008,517(1):465-467.
APA	Song, ZR.,Cheng, XH.,Zhang, EX.,Xing, YM.,Yu, YH.,...&Shen, DS.(2008).Influence of preparing process on total-dose radiation response of high-k Hf-based gate dielectrics.THIN SOLID FILMS,517(1),465-467.
MLA	Song, ZR,et al."Influence of preparing process on total-dose radiation response of high-k Hf-based gate dielectrics".THIN SOLID FILMS 517.1(2008):465-467.