Investigation of environmental friendly Te-free SiSb material for applications of phase-change memory | |
Zhang, T ; Song, ZT ; Liu, B ; Feng, SL | |
刊名 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY
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2008 | |
卷号 | 23期号:5页码:55010-55010 |
关键词 | RANDOM-ACCESS MEMORY CRYSTALLIZATION TRANSITION STORAGE FILMS |
ISSN号 | 0268-1242 |
通讯作者 | Zhang, T, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Lab Nanotechnol, Shanghai 200050, Peoples R China |
学科主题 | Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Condensed Matter |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2012-03-24 |
内容类型 | 期刊论文 |
源URL | [http://ir.sim.ac.cn/handle/331004/94965] ![]() |
专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
推荐引用方式 GB/T 7714 | Zhang, T,Song, ZT,Liu, B,et al. Investigation of environmental friendly Te-free SiSb material for applications of phase-change memory[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2008,23(5):55010-55010. |
APA | Zhang, T,Song, ZT,Liu, B,&Feng, SL.(2008).Investigation of environmental friendly Te-free SiSb material for applications of phase-change memory.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,23(5),55010-55010. |
MLA | Zhang, T,et al."Investigation of environmental friendly Te-free SiSb material for applications of phase-change memory".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 23.5(2008):55010-55010. |
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