Investigation of environmental friendly Te-free SiSb material for applications of phase-change memory

	Investigation of environmental friendly Te-free SiSb material for applications of phase-change memory
	Zhang, T ; Song, ZT ; Liu, B ; Feng, SL
刊名	SEMICONDUCTOR SCIENCE AND TECHNOLOGY
	2008
卷号	23 期号:5 页码:55010-55010
关键词	RANDOM-ACCESS MEMORY CRYSTALLIZATION TRANSITION STORAGE FILMS
ISSN号	0268-1242
通讯作者	Zhang, T, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Lab Nanotechnol, Shanghai 200050, Peoples R China
学科主题	Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Condensed Matter
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/94965]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Zhang, T,Song, ZT,Liu, B,et al. Investigation of environmental friendly Te-free SiSb material for applications of phase-change memory[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2008,23(5):55010-55010.
APA	Zhang, T,Song, ZT,Liu, B,&Feng, SL.(2008).Investigation of environmental friendly Te-free SiSb material for applications of phase-change memory.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,23(5),55010-55010.
MLA	Zhang, T,et al."Investigation of environmental friendly Te-free SiSb material for applications of phase-change memory".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 23.5(2008):55010-55010.