Properties of strain compensated symmetrical triangular quantum wells composed of InGaAs/InAs chirped superlattice grown using gas source molecular beam epitaxy

	Properties of strain compensated symmetrical triangular quantum wells composed of InGaAs/InAs chirped superlattice grown using gas source molecular beam epitaxy
	Gu, Y ; Zhang, YG(张永刚）
刊名	CHINESE PHYSICS LETTERS
	2008
卷号	25 期号:2 页码:726-729
关键词	2.1 MU-M TEMPERATURE-DEPENDENCE LASERS PHOTOLUMINESCENCE WAVELENGTH HETEROSTRUCTURE
ISSN号	0256-307X
通讯作者	Zhang, YG, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
学科主题	Physics, Multidisciplinary
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/94942]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Gu, Y,Zhang, YG. Properties of strain compensated symmetrical triangular quantum wells composed of InGaAs/InAs chirped superlattice grown using gas source molecular beam epitaxy[J]. CHINESE PHYSICS LETTERS,2008,25(2):726-729.
APA	Gu, Y,&Zhang, YG.(2008).Properties of strain compensated symmetrical triangular quantum wells composed of InGaAs/InAs chirped superlattice grown using gas source molecular beam epitaxy.CHINESE PHYSICS LETTERS,25(2),726-729.
MLA	Gu, Y,et al."Properties of strain compensated symmetrical triangular quantum wells composed of InGaAs/InAs chirped superlattice grown using gas source molecular beam epitaxy".CHINESE PHYSICS LETTERS 25.2(2008):726-729.